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Normal-incidence infrared modulators based on InAs/GaSb/AlSb quantum wells grown by molecular beam epitaxy

Author(s):
Publication title:
Photodetectors : materials and devices II : 12-14 February 1997, San Jose, California
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
2999
Pub. Year:
1997
Page(from):
431
Page(to):
434
Pub. info.:
Bellingham, WA: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819424105 [0819424102]
Language:
English
Call no.:
P63600/2999
Type:
Conference Proceedings

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