In-situ wafer curvature measurements during rapid thermal annealing of Si(100)wafers

In-situ wafer curvature measurements during rapid thermal annealing of Si(100)wafers

Author(s):

Jongste,J.F. ( Delft Univ.of Technology )
Oosterlaken,T.G.M.
Bart,G.C.J.
Janssen,G.C.A.M.
Radelaar,S.

Publication title:

Process, Equipment, and Materials Control in Integrated Circuit Manufacturing

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

2637

Pub. Year:

1995

Page(from):

102

Page(to):

112

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819420039 [0819420034]

Language:

English

Call no.:

P63600/2637

Type:

Conference Proceedings

Details

TDL ID:	ZA00020254
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Microelectronic Manufacturing : Process, Equipment, and Materials Control in Integrated Circuit Manufacturing
Conf. info. (Number):	1995
Conf. info. (Venue):	Austin, TX, USA
Conf. info. (Date):	1995.10.25-1995.10.26

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