Physical Vapor Growth and Characterization of High Conductivity 1.4 Inch 4H-SiC Bulk Crystals

Physical Vapor Growth and Characterization of High Conductivity 1.4 Inch 4H-SiC Bulk Crystals

Author(s):

Muller,St.G.

Publication title:

Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997

Title of ser.:

Materials science forum

Ser. no.:

264-268

Pub. Year:

1998

Vol.:

Part1

Page(from):

33

Page(to):

36

Pub. info.:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497911 [0878497919]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00020223
Series ID:	PA00000012
Conf. info. (Name):	ICSCIII-N : International Conference on Silicon Carbide, III-Nitrides Related Materials
Conf. info. (Number):	1997 : 7th
Conf. info. (Venue):	Stockholm, Sweden
Conf. info. (Date):	1997.09.00

Similar Items:

1 Conference Proceedings Bulk Growth of Silicon Carbide Crystals: Analysis of Growth Rate and Crystal Quality Hofmann, D., Eckstein, R., Kadinski, L., Kolbl, M., Muller, M., Muller, St. G., Schmitt, E., Weber, A., Winnacker, A. MRS - Materials Research Society	7 Conference Proceedings Studies on SiC Liquid Phase Crystallization as Technique for SiC Bulk Growth Muller,M., Bickermam,M., Hofmann,D., Weber,A.-D., Winnacker,A. Trans Tech Publications
2 Conference Proceedings Modelling of the PVT-SiC Bulk Growth Process Taking into Account Global Heat Transfer,Mass Transport and Heat of Crystallization and Results on its Experimental … Muller,St.G., Eckstein,R., Hofmann,D., Kadinski,L., Kaufmann,P., Kolbl,M., Schmitt,E. Trans Tech Publications	8 Conference Proceedings Experimental and Theoretical Analysis of the Thermal Conductivity of SiC Powder as Source Material for SiC Bulk Growth Muller, St. G., Fricke, J., Hofmann, D., Horn, R., Nilsson, O., Rexer, B. Trans Tech Publications
3 Conference Proceedings Analysis of the Sublimation Growth Process of Silicon Carbide Bulk Crystals Eckstein, R., Hofmann, D., Makarov, Y., Muller, St. G., Pensl, G., Schmitt, E., Winnacker, A. MRS - Materials Research Society	9 Conference Proceedings Growth Rate Control in SiC-Physical Vapor Transport Method Through Heat Transfer Modeling and Non-Stationary Process Conditions Straubinger, T. L., Bickermann, M., Grau, M., Hofmann, D., Kadinski, L., Muller, S. G., Selder, M., Wellmann, P. J., … Trans Tech Publications
4 Conference Proceedings Experimental and theoretical analysis of the hall-mobility in n-type bulk 6H- and 4H-SiC Muller, St. G., Hofmann, D., Winnacker, A. MRS-Materials Research Society	10 Conference Proceedings Analysis on the Formation and Elimination of Filamentary and Planar Voids in Silicon Carbide Bulk Crystals Hofmann, D., Bickermann, M., Hartung, W., Winnacker, A. Trans Tech Publications
5 Conference Proceedings Equilibrium Growth Morphologies of SiC Polytypes Muller,St.G., Eckstein,R., Grimbergen,R.F.P., Hofmann,D., Rexer,B. Trans Tech Publications	11 Conference Proceedings Top-seeded Solution Growth of Bulk SiC: Search for Fast Growth Regimes Epelbaum, B. M., Hofmann, D., Muller, M., Winnacker, A. Trans Tech Publications
6 Conference Proceedings Experimental and Theoretical Analysis of the High Temperature Thermal Conductivity of Monocrystalline SiC Muller,St.G., Eckstein,R., Fricke,J., Hofmann,D., Hofmann,R., Horn,R., Mehling,H., Nilsson,O. Trans Tech Publications	12 Conference Proceedings Stability Criteria for 4H-SiC Bulk Growth Straubinger, T.L., Bickermann, M., Hofmann, D., Weingaertner, R., Wellmann, P.J., Winnacker, A. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12