Infrared and Raman Studies of Si ヲト-Doped(100)GaAs Grown by MBE at 400。?on c(4x4)Surfaces
- Author(s):
Newman,R.C. Ashwin,M.J. Fahy,M.R. Hart,L. Holmes,S.N. Roberts,C. Wagner,J. - Publication title:
- Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995
- Title of ser.:
- Materials science forum
- Ser. no.:
- 196-201
- Pub. Year:
- 1995
- Pt.:
- 1
- Page(from):
- 425
- Page(to):
- 430
- Pub. info.:
- Zurich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878497164 [0878497161]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
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