Ga Bound Excitons in 6H-SiC
- Author(s):
Henry,A. Hallin,C. Ivanov,I.G. Bergnan,J.P. Kordina,O. Monemar,B. Janzen,E. - Publication title:
- Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995
- Title of ser.:
- Materials science forum
- Ser. no.:
- 196-201
- Pub. Year:
- 1995
- Pt.:
- 1
- Page(from):
- 91
- Page(to):
- 96
- Pub. info.:
- Zurich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878497164 [0878497161]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Changes in the Exciton-Related Photoluminescence of 4H- and 6H-SiC Induced by Uniaxial Stress
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
8
Conference Proceedings
CVD Growth and Characterisation of SiC Epitaxial Layers on Faces Perpendicular to the(0001)Basal Plane
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
4
Conference Proceedings
Some Aspects of the Photoluminescence and Raman Spectroscopy of(1010)-and(1120)-Oriented 4H and 6H Silicon Carbide
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
11
Conference Proceedings
Temperature Dependence and Selective Excitation of the Phosphorus Related Photoluminescence in 4H-SiC
Trans Tech Publications |
Trans Tech Publications |
12
Conference Proceedings
Growth and Characterisation of Thick SiC Epilayers by High Temperature CVD
Trans Tech Publications |