ll9Sn Mossbauer Study of Ion Implanted GaN

ll9Sn Mossbauer Study of Ion Implanted GaN

Author(s):

Fanciulli,M. ( the ISOLDE Collaboration )
Lindroos,M.
Weyer,G.
Moustakas,T.D.

Publication title:

Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995

Title of ser.:

Materials science forum

Ser. no.:

196-201

Pub. Year:

1995

Pt.:

1

Page(from):

61

Page(to):

66

Pub. info.:

Zurich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497164 [0878497161]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00020219
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Defects in Semiconductors : ICDS
Conf. info. (Number):	18th
Conf. info. (Venue):	Sendai, Japan
Conf. info. (Date):	1995.07.23-1995.07.28

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