Modification of Foreign Atom Concentrations and Profiles in Silicon and Si1-x-y GexCy Alloys by Laser Chemical Etching

Modification of Foreign Atom Concentrations and Profiles in Silicon and Si1-x-y GexCy Alloys by Laser Chemical Etching

Author(s):

Boulmer,J.

Publication title:

Semiconductor processing and characterization with lasers : applications in photovoltaics : proceedings of the First International Symposium, Stuttgart, Germany, April 18-20, 1994

Title of ser.:

Materials science forum

Ser. no.:

173-174

Pub. Year:

1995

Page(from):

23

Page(to):

28

Pub. info.:

Zurich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878496839 [0878496831]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00020218
Series ID:	PA00000012
Conf. info. (Name):	International Symposium on Semiconductor Processing and Characterization with Lasers
Conf. info. (Number):	1st
Conf. info. (Venue):	Stuttgart, German
Conf. info. (Date):	1994.04.18-1994.04.20

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