The Structure Quality of Single-Domain MBE GaAs Layers Grown on Hydrogen Passivated Si(001)Substrates

The Structure Quality of Single-Domain MBE GaAs Layers Grown on Hydrogen Passivated Si(001)Substrates

Author(s):

Antipov,V.G.

Publication title:

Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993

Title of ser.:

Materials science forum

Ser. no.:

143-147

Pub. Year:

1994

Vol.:

Pt.3

Page(from):

1595

Page(to):

1598

Pub. info.:

Zurich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878496716 [0878496718]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00020217
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Defects in Semiconductors : ICDS-17
Conf. info. (Number):	17th
Conf. info. (Venue):	Gmunden, Austria
Conf. info. (Date):	1993.07.18-1993.07.23

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