Annealing of Electron Irradiated P-,As-,Sb- and Bi-Doped Czochralski Silicon

Annealing of Electron Irradiated P-,As-,Sb- and Bi-Doped Czochralski Silicon

Author(s):

Publication title:

Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993

Title of ser.:

Materials science forum

Ser. no.:

143-147

Pub. Year:

1994

Vol.:

Pt.2

Page(from):

1239

Page(to):

1244

Pub. info.:

Zurich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878496716 [0878496718]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00020217
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Defects in Semiconductors : ICDS-17
Conf. info. (Number):	17th
Conf. info. (Venue):	Gmunden, Austria
Conf. info. (Date):	1993.07.18-1993.07.23

Similar Items:

1 Conference Proceedings ANNEALING OF IRRADIATED HIGHLY PHOROUSDOPED CZOCHRALSKI SILICON. SVENSSON,B.G., LINDSTROM,J.L. Trans Tech Publications	7 Conference Proceedings DEFECT-FORMATION DEPENDENCE ON GROUP V-DOPANT ATOMS IN ELECTRON-IRRADIATED SILICON Awadelkarim, O.O., Henry, A., Monemar, B., Lindstrom, J.L. Materials Research Society
2 Conference Proceedings Formation of Oxygen Dimers in Silicon during Electron-Irradiation Above 250 °C Lindstrom,J.L., Hallberg,T., Aberg,D., Svensson,B.G., Murin,L.I., Markevich,V.P. Trans Tech Publications	8 Conference Proceedings Doping of Silicon Carbide by Ion Implantation Svensson, B.G., Hallen, A., Linnarsson, M.K., Kuznetsov, A.Yu., Janson, M.S, Aberg, D., Oesterman, J., Persson, P.O.A., … Trans Tech Publications
3 Conference Proceedings A new defect observed in annealed highly phosphorus doped electron-irradiated silicon Lindstrom,J.L., Svensson,B.G., Chen,W.M. Trans Tech Publications	9 Conference Proceedings The Influence of Growth Conditions on the Annealing of Irradiation Induced EH_6,7 Defects in 4H-SiC I. Pintilie, L.S. Lovlie, K. Irmscher, G. Wagner, B.G. Svensson Trans Tech Publications
4 Conference Proceedings Formation of Ultra Shallow Donors in Silicon by Long-Term-Annealing at 470 °C Aberg,D., Hallberg,T., Svensson,B.G., Lindstrom,J.L., Kleverman,M. Trans Tech Publications	10 Conference Proceedings Observation of Metastable Defect in Electron Irradiated 6H-SiC Hemmingsson,C.G., Son,N.T., Kordina,O., Lindstrom,J.L., Janzen,E. Trans Tech Publications
5 Conference Proceedings OPTICAL PROPERTIES OF NOVEL VIBRONIC BANDS IN ELECTRON-IRRADIATED TIN DOPED SILICON Svensson, J.H., Monemar, B., Svensson, B.G. Materials Research Society	11 Conference Proceedings Bound Exciton Recombination in Electron Irradiated 4H-SiC Egilsson,T., Henry,A., Ivanov,I.G., Lindstrom,J.L., Janzen,E. Trans Tech Publications
6 Conference Proceedings Tbe oxygen dimer in silicon:some experimental observatiol's Hallberg,T., Lindstrom,J.L., Murin,L.I., Markevich,V.P. Trans Tech Publications	12 Conference Proceedings A New Photoluminescent Center in Mercury-Doped Silicon Henry,A., Monemar,B., Bergman,J.P., Lindstrom,J.L., Zhang,Y., Corbett,J.W. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12