The DX-Centers Related Mobility in AlGaAs:Charge Correlation and Multilevel-Structure Effects
- Author(s):
- Publication title:
- Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993
- Title of ser.:
- Materials science forum
- Ser. no.:
- 143-147
- Pub. Year:
- 1994
- Vol.:
- Pt.2
- Page(from):
- 1135
- Page(to):
- 1140
- Pub. info.:
- Zurich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878496716 [0878496718]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
Trans Tech Publications |
7
Conference Proceedings
EFFECT OF THE HOST BAND STRUCTURE ON CAPTURE AND EMISSION PROCESSES AT DX CENTERS IN AlGaAs.
Trans Tech Publications |
MRS - Materials Research Society |
8
Conference Proceedings
Local Structure of the DX Center in AlGaAs:Results from Positron Spectroscopy
Trans Tech Publications |
3
Conference Proceedings
TRAPPING CHARACTERISTICS AND ANALYSIS OF Te-RELATED DX CENTERS IN AlGaAs and GaAsP.
Trans Tech Publications |
Trans Tech Publications |
SPIE-The International Society for Optical Engineering |
Trans Tech Publications |
5
Conference Proceedings
Correlated Charged Donors in GaAs/AlGaAs Quantum Well:Quantum- and Mobility-Scattering Times
Trans Tech Publications |
11
Conference Proceedings
Confinement Effects on the Electronic Structure of Shallow Acceptors in GaAs/AlGaAs Quantum Wells
Trans Tech Publications |
Trans Tech Publications |
North-Holland |