Photoexcited and Metastable States of DX Centers in Si Doped AlxGal-xAs

Author(s):

• Jia,Y.B.
• Grimmeiss,H.G.
• Calleja,E.

Publication title:

Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993

Title of ser.:

Materials science forum

Ser. no.:

143-147

Pub. Year:

1994

Vol.:

Pt.2

Page(from):

1025

Page(to):

1030

Pub. info.:

Zurich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878496716 [0878496718]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings