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Coexistence of Two Localized States of the Ge Donor in GaAs as Evidenced by a Huge Increase of the Electron Mobility at PPC Conditions

Author(s):
Skierbiszewski,C.
Wisniewski,P.
Suski,T.
Wilamowski,Z.
Ostermayer,G.
Jantsch,W.
Walker,P.
Mason,N.J.
Singleton,J.
4 more
Publication title:
Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993
Title of ser.:
Materials science forum
Ser. no.:
143-147
Pub. Year:
1994
Vol.:
Pt.2
Page(from):
1013
Page(to):
1018
Pub. info.:
Zurich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878496716 [0878496718]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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