EPR Experiments on Hydrogen-Implanted Silicon Crystals:Annealing Properties of Bond Center Hydrogen
- Author(s):
- Publication title:
- Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993
- Title of ser.:
- Materials science forum
- Ser. no.:
- 143-147
- Pub. Year:
- 1994
- Vol.:
- Pt.2
- Page(from):
- 909
- Page(to):
- 914
- Pub. info.:
- Zurich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878496716 [0878496718]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
8
Conference Proceedings
Silicon Defect characterization by High Resolution Laplace Deep Level Transient Spectroscopy
Electrochemical Society, SPIE-The International Society for Optical Engineering |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
11
Conference Proceedings
High resolution Laplace deep level transient spectroscopy a new tool to study implant damage in silieon
Electrochemical Society |
Trans Tech Publications |
Trans Tech Publications |