Unusual Diffusion and Precipitation Behavior of Ni and Cu in Si upon Elevated-Temperature Ion Implantation

Unusual Diffusion and Precipitation Behavior of Ni and Cu in Si upon Elevated-Temperature Ion Implantation

Author(s):

Publication title:

Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993

Title of ser.:

Materials science forum

Ser. no.:

143-147

Pub. Year:

1994

Vol.:

Pt.2

Page(from):

803

Page(to):

808

Pub. info.:

Zurich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878496716 [0878496718]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00020217
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Defects in Semiconductors : ICDS-17
Conf. info. (Number):	17th
Conf. info. (Venue):	Gmunden, Austria
Conf. info. (Date):	1993.07.18-1993.07.23

Similar Items:

1 Conference Proceedings FORMATION OF WELL-SEPARATED BURIED AND SURFACE NICKEL-SILICIDE LAYERS IN A SINGLE ION IMPLANTATION STEP Wu, M.F., De Wachter, J., Hendrickx, P., Pattyn, H., Van Bavel, A.M., Langouche, G., Vanhellemont, J., Bender, H., … Materials Research Society	7 Conference Proceedings In Search of Co-Acceptor Pairs in Highly Doped p-Si:A Mossbauer Spectroscopy Study Bavel,A,-M.Van, Langouche,G. Trans Tech Publications
2 Conference Proceedings ION BEAM SYNTHESIS OF BURIED CoxNi1-xSi2 LAYERS IN SILICON Wu, M. F., Wachter, J. De, Bavel, A.-M. Van, Pattyn, H., Langouche, G., Vanhellemont, J., Bender, H., Temst, K., Wuyts, … MRS - Materials Research Society	8 Conference Proceedings On the Behaviour of the Divacancy in Silicon during Anneals between 200 and 350°C Trauwaert,M.-A., Vanhellemont,J., Maes,H.E., Bavel,A.-M.Van, Langouche,G., Stesmans,A., Clauws,P. Trans Tech Publications
3 Conference Proceedings ION BEAM SYNTHESIS OF BURIED CoxNi1-xSi2 LAYERS IN SILICON Wu, M. F., Wachter, J. De, Bavel, A.-M. Van, Pattyn, H., Langouche, G., Vanhellemont, J., Bender, H., Temst, K., Wuyts, … MRS - Materials Research Society	9 Conference Proceedings Formation and Thermal Stability of Nd0.32Y0.68Si1.7 Layers Formed by Channeled Ion Beam Synthesis Wu, M. F., Vantomme, A., Hogg, S., Pattyn, H., Langouche, G., Jin, S., Bender, H. MRS - Materials Research Society
4 Conference Proceedings High Quality GdSi1.7 Layers Formed by High Dose Channeled Implantation Wu, M. F., Vantomme, A., Pattyn, H., Langouche, G., Bender, H. MRS - Materials Research Society	10 Conference Proceedings The Bending of Si Crystals as a Means to Determine the Orientation of Defects in Si Bavel,A.-M.Van, Degroote,S., Vantomme,A., Stesmans,A., Langouche,G. Trans Tech Publications
5 Conference Proceedings Structural Characterization of Ion Beam Synthesized Epitaxial ErSi2-x Layers Bender, H., Wu, M. F., Vantomme, A., Pattyn, H., Langouche, G. MRS - Materials Research Society	11 Conference Proceedings Low Temperature Anneal of the Divacancy in P-Type Silicon Trauwaert, M.-A., Vanhellemont, J., Maes, H. E., Bavel, A.-M. Van, Langouche, G., Stesmans, A., Clauws, P. MRS - Materials Research Society
6 Conference Proceedings Co-Acceptor Complexes in Si Bavel,A.-M.Van, Langouche,G. Trans Tech Publications	12 Conference Proceedings Mossbauer Study of the Electronic and Vibrational Properties of Implanted Te in GaAs and AlxGal-XAS Langouche,G., Bemelmans,H., Odeurs,J., Borghs,G., Potter,M.De, Deraedt,W., Rossum,M.Van Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12