Blank Cover Image

Diffusion,Interface Mixing and Schottky Barrier Formation

Author(s):
Walukiewicz,W.  
Publication title:
Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993
Title of ser.:
Materials science forum
Ser. no.:
143-147
Pub. Year:
1994
Vol.:
Pt.1
Page(from):
519
Page(to):
530
Pub. info.:
Zurich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878496716 [0878496718]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Pressure Dependence of Schottky Barrier Height at Pt/GaAs Interface

Shan,W., Li,M.F., Yu,P.Y., Walukiewicz,W., Hansen,W.L.

Trans Tech Publications
7 Conference Proceedings Photoemission studies of the Ag/InP(110) interface: interfacial reactions and Schottky barrier formation

Petro, W. G., Kendelewicz, T., Babalola, I. A., Lindau, I., Spicer, W. E.

North-Holland
2 Conference Proceedings SCHOTTKY BARRIER FORMATION AND LONG TERM STABILITY OF METAL/n-InP INTERFACES

Shi, Z.Q., Anderson, W.A.

Materials Research Society
8 Conference Proceedings Soft X-ray photoemission measurement of Schottky barrier formation at the Pd/Si interface (Abstract)

Purtell, R, Ho. P. S., Rubloff, G. W.,, Hollinger, G.

North-Holland
3 Conference Proceedings Defect formation and electronic transport at AlGaN/GaN interfaces

Hsu,L., Walukiewicz,W., Haller,E.E.

Trans Tech Publications
9 Conference Proceedings Equilibrium Structure and Schottky Barriers at ErAs/GaAs Interfaces

Petukhov, A. G., Hemmelman, B. T., Lambrecht, W. R. L.

MRS - Materials Research Society
4 Conference Proceedings DEFECT REACTIONS AT METAL/SEMICONDUCTOR AND SEMICONDUCTOR/SEMICONDUCTOR INTERFACES

Walukiewicz, W.

Materials Research Society
10 Conference Proceedings EFFECTS OF INTERFACES ON THE a-Si:H SCHOTTKY BARRIER CHARACTERISTICS

Li, Y. M., Malone, C., Kumar, S., Wronski, C. R., Nguyen, H. V., Collins, R W.

Materials Research Society
5 Conference Proceedings TRANSITION FROM SCHOTTKY LIMIT TO BARDEEN LIMIT IN THE SCHOTTKY BARRIER FORMATION OF A1 ON n- AND p-GaAs(110) INTERFACES

Chin, K.K., Cao, R., Kendelewicz, T., Miyano, K., Williams, M.D., Doniach, S., Lindau, I., Spicer, W.E.

Materials Research Society
11 Conference Proceedings Electronic and Structural Properties And Schottky Barrier Formation of Alkali Metal-Semiconductor Interface

Soukiassian P., Kendelewicz T.

Plenum Press
6 Conference Proceedings Application of the amphoteric native defect model to diffusion and activation of shallow impurities in III-V semiconductors

Walukiewicz, W.

MRS - Materials Research Society
12 Conference Proceedings The Effects of Structure on the Formation of Schottky Barriers at Nanoparticle-oxide Interfaces

Ramsey Kraya, Laura Y. Kraya

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12