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Strain Relaxation During Epitaxial Crystallization of Ge.Si1-x Alloy Layers Produced by Ion-Implantation

Author(s):
Publication title:
Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993
Title of ser.:
Materials science forum
Ser. no.:
143-147
Pub. Year:
1994
Vol.:
Pt.1
Page(from):
507
Page(to):
512
Pub. info.:
Zurich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878496716 [0878496718]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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