Positron Lifetime Investigations of Electron Irradiated InP
- Author(s):
- Publication title:
- Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993
- Title of ser.:
- Materials science forum
- Ser. no.:
- 143-147
- Pub. Year:
- 1994
- Vol.:
- Pt.1
- Page(from):
- 299
- Page(to):
- 304
- Pub. info.:
- Zurich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878496716 [0878496718]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
Trans Tech Publications |
Trans Tech Publications |
Materials Research Society |
8
Conference Proceedings
Vacancies in As-Grown and Electron-Irradiated 4H-SiC Epilayers Investigated by Positron Annihilation
Trans Tech Publications |
Trans Tech Publications |
MRS - Materials Research Society |
Trans Tech Publications |
Trans Tech Publications |
Materials Research Society |
11
Conference Proceedings
HIGH TEMPERATURE INVESTIGATIONS 0N SILICON BY MEANS OF POSITRON ANNIHILATION.
Trans Tech Publications |
Materials Research Society |
12
Conference Proceedings
THERMAL TRANFORMATION OF THE ELECTRON-IRRADIATED INDUCED DEFECT INDUCED DEFECT H4 IN p TYPE InP.
Trans Tech Publications |