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Incorporation of Be into InxGa1-xAs(0.004。蛉。?.17)Studied by Photoluminescence and Resonant Raman Spectroscopy of Local Vibrational Modes

Author(s):
Alvarez,A.L.
Wagner,J.
Calle,F.
Maier,M.
Gutierrez,G.
Sacedon,A.
Calleja,E.
Mufioz,E.
3 more
Publication title:
Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993
Title of ser.:
Materials science forum
Ser. no.:
143-147
Pub. Year:
1994
Vol.:
Pt.1
Page(from):
241
Page(to):
246
Pub. info.:
Zurich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878496716 [0878496718]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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