Behaviour of Boron After Implantation into Silicon-Schottky Diodes:A β-NMR Study on the Fermi-Level Dependence | 東京工業大学附属図書館文献データベース

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Behaviour of Boron After Implantation into Silicon-Schottky Diodes:A β-NMR Study on the Fermi-Level Dependence

Author(s):

Ergezinger,K.-H.

Weißenmayer,S.

Publication title:

Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993

Title of ser.:

Materials science forum

Ser. no.:

143-147

Pub. Year:

1994

Vol.:

Pt.1

Page(from):

135

Page(to):

140

Pub. info.:

Zurich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878496716 [0878496718]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00020217
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Defects in Semiconductors : ICDS-17
Conf. info. (Number):	17th
Conf. info. (Venue):	Gmunden, Austria
Conf. info. (Date):	1993.07.18-1993.07.23

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