The Bound Exciton Model for Isoelectronic Centers in Silicon
- Author(s):
- Publication title:
- Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993
- Title of ser.:
- Materials science forum
- Ser. no.:
- 143-147
- Pub. Year:
- 1994
- Vol.:
- Pt.1
- Page(from):
- 105
- Page(to):
- 110
- Pub. info.:
- Zurich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878496716 [0878496718]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
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