The Study of Defects Induced by the Implantation of O Ions into GaAs by a Slow Positron Beam

The Study of Defects Induced by the Implantation of O Ions into GaAs by a Slow Positron Beam

Author(s):

Publication title:

Shallow Impurities in Semiconductors : Proceedings of the Fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August, 1992

Title of ser.:

Materials science forum

Ser. no.:

117-118

Pub. Year:

1993

Page(from):

411

Page(to):

416

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878496549 [0878496548]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00020216
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Shallow Impurities in Semiconductors
Conf. info. (Number):	5th
Conf. info. (Venue):	Kobe, Japan
Conf. info. (Date):	1992.08.05-1992.08.08

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