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Fermi Level Effect and Vacancy Contribution to the Out-diffusion of Si in GaAs

Author(s):
Publication title:
Shallow Impurities in Semiconductors : Proceedings of the Fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August, 1992
Title of ser.:
Materials science forum
Ser. no.:
117-118
Pub. Year:
1993
Page(from):
399
Page(to):
404
Pub. info.:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878496549 [0878496548]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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