Si Doping of GaAs Grown by Molecular Beam Epitaxy on Different Substrate Orientations

Si Doping of GaAs Grown by Molecular Beam Epitaxy on Different Substrate Orientations

Author(s):

Publication title:

Shallow Impurities in Semiconductors : Proceedings of the Fifth International Conference on Shallow Impurities in Semiconductors "Physics and Control of Impurities", International Conference Center Kobe, Japan, 5 to 8 August, 1992

Title of ser.:

Materials science forum

Ser. no.:

117-118

Pub. Year:

1993

Page(from):

387

Page(to):

392

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878496549 [0878496548]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00020216
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Shallow Impurities in Semiconductors
Conf. info. (Number):	5th
Conf. info. (Venue):	Kobe, Japan
Conf. info. (Date):	1992.08.05-1992.08.08

Similar Items:

1 Conference Proceedings Magnesium-Doped GaN Films Grown by Molecular Beam Epitaxy on GaAs(111)B Substrates Cheng,T.S., Foxon,C.T., Jeffs,N.J., Dewsnip,D.J., Flannery,L.B., Orton,J.W., Harrison,I., Novikov,S.V., Ber,B.Ya., … Trans Tech Publications	7 Conference Proceedings ANOMALOUS LUMINESCENCE PROPERTIES OF GaAs GROWN BY MOLECULAR BEAM EPITAXY Szafranek, I., Plano, M.A., McCollum, M.J., Jackson, S.L., Stockman, S.A., Cheng, K.Y., Stillman, G.E. Materials Research Society
2 Conference Proceedings The Influence of Substrate Polarity on the Blue Emission From As-Doped GaN Layers Grown by Molecular Beam Epitaxy Novikov, S.V., Zhao, L.X., Foxon, C.T., Harrison, I., Campion, R.P., Staddon, C.R., Kang, S.W., Kryliouk, O., Anderson, … Materials Research Society	8 Conference Proceedings Modulation of Arsenic Incorporation In GaN Layers Grown by Molecular Beam Epitaxy Novikov, S.V., Zhao, L.X., Foxon, C.T., Ber, B.Ja., Kovarsky, A.P., Harrison, I., Fay, M.W., Brown, P.D. Materials Research Society
3 Conference Proceedings FILMS GROWN ON VICINAL GaAs ( --- ) SUBSTRATES BY MOLECULAR BEAM EPITAXY Yang, K., Schowalter, L. J. Materials Research Society	9 Conference Proceedings (4.14) 8:04 - 8:07 PM - Silicon Nanowhiskers Grown on <> Si Substrates by Molecular Beam Epitaxy Werner, P., Schubert, L., Zakharov, N. D., Gerth, G., Kolb, F. M., Gosele, U.(MPI) Electrochemical Society
4 Conference Proceedings InAsSb PHOTODIODES GROWN ON InAs, GaAs AND Si SUBSTRATES BY MOLECULAR BEAM EPITAXY Dobbelaere, W., De Boeck, J., De Raedt, W., Vanhellemont, J., Zou, G., Van Hove, M., Brijs, B., Mertens, R., Borghs, G. Materials Research Society	10 Conference Proceedings Effects of Substrate Orientation on the Spontaneous Ordering of GaAsSb Epilayers Grown by Molecular Beam Epitaxy Gorman, Brian P., Norman, Andrew G., Lukic-Zrnic, Reiko, Gelding, Terry D., Littler, Chris L. Materials Research Society
5 Conference Proceedings Optical Properties of Carbon Doped Cubic GaN Epilayers Grown on GaAs (001) Substrate by Molecular Beam Epitaxy As, D.J., Kohler, U., Lischka, K. Materials Research Society	11 Conference Proceedings Er-doped GaN Grown By Molecular Beam Epitaxy Ng, H.M Electrochemical Society
6 Conference Proceedings MOLECULAR BEAM EPITAXY OF LOW TEMPERATURE GROWN GaAs PHOTOCONDUCTORS Dykaar, D.R., Eaglesham, D.J., Keil, U.D., Greene, B.I., Saeta, P.N., Pfeiffer, L.N., Kopf, R.F., Darack, S.B., West, … Materials Research Society	12 Conference Proceedings The carriers localization influence on the optical properties of GaAsN/GaAs heterostructures grown by molecular-beam epitaxy Kryzhanovskaya, N.V., Gladyshev, A.G., Sizov, D.S., Kovsh, A.R., Tsatsul'nikov, A.F., Chi, J.Y., Wang, J.S., Wei, L., … SPIE-The International Society for Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12