New features in the photoluminescence spectra of bound multiexciton complexes in uniaxially stressed boron doped silicon

New features in the photoluminescence spectra of bound multiexciton complexes in uniaxially stressed boron doped silicon

Author(s):

Publication title:

Shallow impurities in semiconductors : proceedings of the Fourth International Conference on Shallow Impurities in Semiconductors, King's College London, 31 July to 2 August 1990

Title of ser.:

Materials science forum

Ser. no.:

65-66

Pub. Year:

1991

Page(from):

211

Page(to):

216

Pub. info.:

Aedermannsdorf: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878496198 [087849619X]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00020214
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Shallow Impurities in Semiconductors
Conf. info. (Number):	4th
Conf. info. (Venue):	London, UK
Conf. info. (Date):	1990.07.31-1990.08.02

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