PROFILING OF VACANCY DEFECTS IN ION-IMPLANTED Si BY SLOW POSITRON BEAM.
- Author(s):
- Publication title:
- Defects in Semiconductors : Proceedings of the 14th International Conference on Defects in Semiconductors, ICDS-14, Paris, France, August 18-22, 1986
- Title of ser.:
- Materials science forum
- Ser. no.:
- 10-12
- Pub. Year:
- 1986
- Vol.:
- Part2
- Page(from):
- 527
- Page(to):
- 532
- Pub. info.:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878495511 [0878495517]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
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