RELATIONSHIP BETWEEN CRYSTAL DEFECTS, Ge OUTDIFFUSION AND V/III RATIO IN MOVPE GROWN (001) GaAs/Ge

RELATIONSHIP BETWEEN CRYSTAL DEFECTS, Ge OUTDIFFUSION AND V/III RATIO IN MOVPE GROWN (001) GaAs/Ge

Author(s):

Publication title:

Defect-interface interactions : symposium held November 29-December 2, 1993, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

319

Pub. Year:

1994

Page(from):

135

Pub. info.:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992184 [1558992189]

Language:

English

Call no.:

M23500/319

Type:

Conference Proceedings

Details

TDL ID:	ZA00019852
Series ID:	PA00000011
Conf. info. (Name):	Symposium on defect-interface interactions
Conf. info. (Number):	1993
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1993.11.29-1993.12.02

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