TEM STUDIES OF IMPURITY INDUCED DEFECTS IN GaAs GROWN BY CBE
- Author(s):
- Publication title:
- Defect-interface interactions : symposium held November 29-December 2, 1993, Boston, Massachusetts, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 319
- Pub. Year:
- 1994
- Page(from):
- 117
- Pub. info.:
- Pittsburgh, PA: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558992184 [1558992189]
- Language:
- English
- Call no.:
- M23500/319
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
INTERDIFFUSION ENHANCEMENT IN AlGaAs/GaAs SUPERLATTICES IN THE PRESENCE OF CARBON
MRS - Materials Research Society |
7
Conference Proceedings
THE STRUCTURE OF GaAs GROWN BY CHEMICAL BEAM EPITAXY ON LOW-TEMPERATURE CLEANED SILICON
Materials Research Society |
Materials Research Society |
8
Conference Proceedings
THE CREATION OF MISFIT DISLOCATIONS; A STUDY OF InGaAs ALLOYS ON GaAs SUBSTRATES
Materials Research Society |
Materials Research Society |
Society of Photo-optical Instrumentation Engineers |
Materials Research Society |
10
Conference Proceedings
A Refined Model for Threading Dislocation Filtering in InxGa1-xAs/GaAs Epitaxial Layers
MRS - Materials Research Society |
Materials Research Society |
11
Conference Proceedings
High power broad area GaInAs/GaAs/GaInP lasers grown by CBE for pumping Er doped glasses
MRS - Materials Research Society |
MRS - Materials Research Society |
Trans Tech Publications |