INTERDIFFUSION ENHANCEMENT IN AlGaAs/GaAs SUPERLATTICES IN THE PRESENCE OF CARBON

INTERDIFFUSION ENHANCEMENT IN AlGaAs/GaAs SUPERLATTICES IN THE PRESENCE OF CARBON

Author(s):

Publication title:

Defect-interface interactions : symposium held November 29-December 2, 1993, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

319

Pub. Year:

1994

Page(from):

105

Pub. info.:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992184 [1558992189]

Language:

English

Call no.:

M23500/319

Type:

Conference Proceedings

Details

TDL ID:	ZA00019852
Series ID:	PA00000011
Conf. info. (Name):	Symposium on defect-interface interactions
Conf. info. (Number):	1993
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1993.11.29-1993.12.02

Similar Items:

1 Conference Proceedings TEM STUDIES OF IMPURITY INDUCED DEFECTS IN GaAs GROWN BY CBE Jamal, Zul, Goodhew, P. J. MRS - Materials Research Society	7 Conference Proceedings DOSE EFFECTS IN Si FIB-MIXING OF SHORT PERIOD AlGaAs/GaAs SUPERLATTICES Steckl, A. J., Chen, P., Choo, A., Jackson, H., Boyd, J. T., Pronko, P. P., Ezis, A., Kolbas, R. M. Materials Research Society
2 Conference Proceedings DISORDERING OF A SHORT PERIOD GaAs-AlGaAs SUPERLATTICE BY C DIFFUSION Jamal, Z., Goodhew, P.J. Materials Research Society	8 Conference Proceedings Modeling of Al/Ga Interdiffusion in AlAs/GaAs Superlattice Materials Tai, C.-Y., Deal, M.D., Plummer, J.D. Electrochemical Society
3 Conference Proceedings ENHANCED PHOTOLUMINESCENCE FROM AlGaAs/GaAs SUPERLATTICE GRATINGS FABRICATED BY Si FIB IMPLANTATION Steckl, A.J., Chen, P., Choo, A.G., Jackson, H.E., Boyd, J.T., Ezis, A., Pronko, P.P., Novak, S.W., Kolbas, R.M. Materials Research Society	9 Conference Proceedings Er diffusion and Er-induced Ga-AI interdiffusion in GaAs/AlGaAs quantum structures Bresler,M.S., Ber,B.Ya., Gusev,O.B., Lindmark,E.K., Prineas,J.P., Gibbs,H.M., Khitrova,G., Masterov,V.F., … Trans Tech Publications
4 Conference Proceedings STUDY OF THE CARRIER CONCENTRATION EFFECT ON Si ENHANCED AlGaAS/GaAS SUPERLATTICE MIXING Mei, Ping, Venkatesan, T., Schwarz, S. A., Stoffel, N. G., Harbison, J. P., Florez, L. A. Materials Research Society	10 Conference Proceedings Resonant Impurity-Electron-Optical-Phonon Interactions in GaAs and GaAs/AlGaAs Quantum Wells and Superlattices Cheng P. J., McCombe D. B., Brozak G., Schaff W. Kluwer Academic Publishers
5 Conference Proceedings Er-induced Ga-Al interdiffusion in GaAs/AlGaAs quantum structures Lindmark,E.K., Prineas,J.P., Khitrova,G., Gibbs,H.M., Gusev,O.B., Ber,B.Ya., Bresler,M.S., Yassievich,I.N., … SPIE-The International Society for Optical Engineering	11 Conference Proceedings Photo Modified Growth of GaAs by Chemical-Beam Epitaxy Jothilingam, R., Farrell, T., Joyce, T. B., Goodhew, P. J. MRS - Materials Research Society
6 Conference Proceedings A Refined Model for Threading Dislocation Filtering in InxGa1-xAs/GaAs Epitaxial Layers MacPherson, G., Goodhew, P. J. MRS - Materials Research Society	12 Conference Proceedings Layer disordering and carrier concentration in heavily carbon-doped AlGaAs/GaAs superlattices You, H. M., Tan, T. Y., Gosele, U. M., Hofler, G. E., Hsieh, K. C., Holonyak, N., Jr., Lee, S. -T. MRS - Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12