Stress Enhanced Arsenic Diffusion in Titanium Salicided Junctions by Implantation into C49 TiSi2 and Rapid Thermal Annealing

Stress Enhanced Arsenic Diffusion in Titanium Salicided Junctions by Implantation into C49 TiSi2 and Rapid Thermal Annealing

Author(s):

Publication title:

Advanced interconnects and contacts : symposium held April 5-7, 1999, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

564

Pub. Year:

1999

Page(from):

3

Pub. info.:

Warrendale, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994713 [1558994718]

Language:

English

Call no.:

M23500/564

Type:

Conference Proceedings

Details

TDL ID:	ZA00019849
Series ID:	PA00000011
Conf. info. (Name):	Symposium on advanced interconnects and contacts
Conf. info. (Number):	1999
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1999.04.05-1999.04.07

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