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Normal and Inverted AlGaN/GaN Based Piezoelectric Field Effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy

Author(s):
Murphy, M. J.
Foutz, B. E.
Chu, K.
Wu, H.
Yeo, W.
Schaff, W. J.
Ambacher, O.
Eastman, L. F.
Eustis, T. J.
Dimitrov, R.
Stutzmann, M.
Rieger, W.
7 more
Publication title:
GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
537
Pub. Year:
1999
Page(from):
G8.4.1
Pub. info.:
Warrendale, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994430 [1558994432]
Language:
English
Call no.:
M23500/537
Type:
Conference Proceedings

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