Blank Cover Image

Ion Channeling Analysis of Gallium Nitride Implanted With Deuterium

Author(s):
Publication title:
GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
537
Pub. Year:
1999
Page(from):
G3.73.1
Pub. info.:
Warrendale, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994430 [1558994432]
Language:
English
Call no.:
M23500/537
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings The Behavior of Ion-Implanted Hydrogen in Gallium Nitride

Myers, S. M., Headley, T. J., Hills, C. R., Han, J., Petersen, G. A., Seager, C. H., Wampler, W. R.

MRS - Materials Research Society
7 Conference Proceedings ION IMPLANTATION DISORDER IN STRAINED-LAYER SUPERLATTICES

Arnold, G. W., Picrauz-S. T., Peercy, P. S., Myers, D. R., Biefeild, R. M., Dawson, L. R.

Materials Research Society
2 Conference Proceedings Interaction of deuterium with internal surfaces in silicon

Myers,S.M., Follstaedt,D.M., Stein,H.J., Wampler,W.R.

Trans Tech Publications
8 Conference Proceedings Deuterium permeation behavior in polrcristalline nickel implanted with nickeland helium ions

Shi. Q-S, Thompson. A. D, Smeltzer. W. W, Riehm. P, M

Kluwer Academic Publishers
3 Conference Proceedings DEUTERIUM INTERACTIONS WITH ION-IMPLANTED OXYGEN IN Cu AND Au

Myers, S.M., Swansiger, W.A., Follstaedt, D.M.

Materials Research Society
9 Conference Proceedings INTERACTION OF DEUTERIUM WITH BURIED OXIDES IN SILICON

Myers, S. M.

Materials Research Society
4 Conference Proceedings Lattice location of deuterium in plasma and gas charged Mg doped GaN

Wampler, W. R., Barbour, J. C., Seager, C. H., Myers, S. M., Wright, A. F., Han, J.

MRS-Materials Research Society
10 Conference Proceedings HYDROGENATION OF GALLIUM NITRIDE

Brandt, M. S., Johnson, N. M., Molnar, R. J., Singh, R., Moustakas, T. D.

MRS - Materials Research Society
5 Conference Proceedings Implantation Activation Annealing of Si-Implanted Gallium Nitride at Temperatures > 1100°C

Zolper, J. C., Han, J., Biefeld, R. M., Van Deusen, S. B., Wampler, W. R., Pearton, S. J., Williams, J. S, Tan, H. H., …

MRS - Materials Research Society
11 Conference Proceedings Carrier Localization in Gallium Nitride

Wetzel,C., Walukiewicz,W., Haller,E.E., Ager,J.W.III, Chen,A., Fischer,S., Yu,P.Y., Jeanloz,R., Grzegory,I., …

Trans Tech Publications
6 Conference Proceedings Effect of Oxygen Ion Implantation in Gallium Nitride

Jiang, W., Weber, W. J., Thevuthasan, S., Exarhos, G. J., Bozlee, B. J.

MRS - Materials Research Society
12 Conference Proceedings STRESS RELEASE IN ION IMPLANTED LATTICE MISMATCHED SEMICONDUCTOR HETEROSTRUCTURES

Arnold, G.W., Picraux, S.T., Myers, D.R., Doyle, B.L., Peercy, P.S., Biefeld, R.M., Dawson, L.R.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12