Blank Cover Image

Cubic InGaN Grown by MOCVD

Author(s):
Publication title:
GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
537
Pub. Year:
1999
Page(from):
G3.25.1
Pub. info.:
Warrendale, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994430 [1558994432]
Language:
English
Call no.:
M23500/537
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings The Effect of Low-Temperature GaAs Nucleation on the Growth of GaN on Silicon(001) During MOVPE Process

Zheng, L. X., Liang, J. W., Yang, H., Li, J. B., Wang, Y. T., Xu, D. P., Li, X. F., Duan, L. H., Hu, X. W.

MRS - Materials Research Society
7 Conference Proceedings High-power single-mode 915-nm, InAlGaAs quantum-well lasers grown by MOCVD

Xu, Z., Gao, W., Nelson, A., Luo, K., Yang, H., Cheng, L., Siskavich, B., Wang, Z., Chin, A.K.

SPIE-The International Society for Optical Engineering
2 Conference Proceedings Characteristics of ZnO film grown by MOCVD

Wang, X., Yang, S., Wang, J., Ong, H.C., Yin, J., Yin, Z., Li, M., Du, G.

SPIE-The International Society for Optical Engineering
8 Conference Proceedings The formation of In-rich regions at the periphery of the inverted hexagonal pits of InGaN thin-films grown by metalorganic vapor phase epitaxy

Li, P., Chua, S. J., Hao, M., Wang, W., Zhang, X., Sugahara, T., Sakai, S.

MRS-Materials Research Society
3 Conference Proceedings Stimulated emission under photopumping in ZnSe-based MQWs grown by AP-MOCVD (Invited Paper)

Fan,X.W., Guan,Z.P., Shen,D.Z., Zhang,J.Y., Zheng,Z.H., Yang,B.J.

SPIE-The International Society for Optical Engineering
9 Conference Proceedings High-temperature operation of 650-nm AIGaIP quantum well laser diodes grown by LP-MOCVD

Ma,X., Cao,Q., Wang,S., Guo,L., Lian,P., Wang,L., Zhang,X., Yang,Y., Zhang,H., Wang,G., Chen,L.

SPIE-The International Society for Optical Engineering
4 Conference Proceedings Growth and characterization of GaxIn1-xAs1-ySby epitaxial layers grown by LP-MOCVD [6029-38]

Wang J., Wang Y., Wang T., Yang S., Li X., Yin J., Sai X., Gao H.

SPIE - The International Society of Optical Engineering
10 Conference Proceedings Statistical Analysis of Local Composition and Luminescence in InGaN Grown by Molecular Beam Epitaxy

Einfeldt, S., Bottcher, T., Hommel, D., Selke, H., Ryder, P. L., Bertram, F., Riemann, T., Rudloff, D., Christen, J.

MRS - Materials Research Society
5 Conference Proceedings Carrier Dynamics of Abnormal Temperature-Dependent Emission Shift in MOCVD-Grown InGaN Epilayers and InGaN/GaN Quantum Wells

Cho, Y-H., Little, B. D., Gainer, G. H., Song, J. J., Keller, S., Mishra, U. K,, DenBaars, S. P.

MRS - Materials Research Society
11 Conference Proceedings Character and structure of oxide ceramics synthesis using a high-power CO2 laser

Zheng,Q., Wang,T., Tao,X., Gu,J., Xu,D., Li,Z., Zheng,F., Li,X.

SPIE-The International Society for Optical Engineering
6 Conference Proceedings Reduction of Dislocation Density of SiC Crystals Grown on Seeds after H2 Etching

X.F. Chen, F.S. Zhang, X.L. Yang, Y. Peng, X.J. Xie, T. Li, X.B. Hu, X.G. Xu, G.L. Li, R.Q. Wang

Trans Tech Publications
12 Conference Proceedings Development of 1.3 μm oxide-confined VCSELs grown by MOCVD

Murray, C.S., Newman, F.D., Sun, S., Clevenger, J.B., Bossret, D. J., Wang, C.X., Hou, H.Q.

SPIE-The International Society for Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12