Structural Study of GaN(As,P) Layers Grown on (0001) GaN by Gas Source Molecular Beam Epitaxy

Structural Study of GaN(As,P) Layers Grown on (0001) GaN by Gas Source Molecular Beam Epitaxy

Author(s):

Publication title:

GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

537

Pub. Year:

1999

Page(from):

G3.11.1

Pub. info.:

Warrendale, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994430 [1558994432]

Language:

English

Call no.:

M23500/537

Type:

Conference Proceedings

Details

TDL ID:	ZA00019847
Series ID:	PA00000011
Conf. info. (Name):	Symposium on GaN and related alloys
Conf. info. (Number):	1998
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1998.11.30-1998.12.04

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