Analysis of Failure in Metallic Thin-Film Interconnects Due to Stress and Electromigration-Induced Void Propagation

Analysis of Failure in Metallic Thin-Film Interconnects Due to Stress and Electromigration-Induced Void Propagation

Author(s):

Publication title:

Materials reliability in microelectronics VIII : symposium held April 13-16, 1998, San Francisco, California, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

516

Pub. Year:

1998

Page(from):

165

Pub. info.:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994225 [155899422X]

Language:

English

Call no.:

M23500/516

Type:

Conference Proceedings

Details

TDL ID:	ZA00019845
Series ID:	PA00000011
Conf. info. (Name):	Symposium on materials reliability in microelectronics
Conf. info. (Number):	8th
Conf. info. (Venue):	San Francisco, CA, USA
Conf. info. (Date):	1998.04.13-1998.04.16

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