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Optimization of Reactor Geometry and Growth Conditions for GaN Halide Vapor Phase Epitaxy

Author(s):
Safvi, S. A.
Perkins, N. R.
Horton, M. N.
Thon, A.
Zhi, D.
Kuech, T. F.
1 more
Publication title:
III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
423
Pub. Year:
1996
Page(from):
227
Pub. info.:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993266 [1558993266]
Language:
English
Call no.:
M23500/423
Type:
Conference Proceedings

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