TEM Structure Characterization of Ti/Al and Ti/Al/Ni/Au Ohmic Contacts for n-GaN
- Author(s):
Ruvimov, S. Liliental-Weber, Z. Washburn, J. Duxstad, K. J. Haller, E. E. Fan, Z.-F. Mohammad, S. N. Kim, W. Botchkarev, A. E. Morkoc, H. - Publication title:
- III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 423
- Pub. Year:
- 1996
- Page(from):
- 201
- Pub. info.:
- Pittsburgh, Pa.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558993266 [1558993266]
- Language:
- English
- Call no.:
- M23500/423
- Type:
- Conference Proceedings
Similar Items:
Materials Research Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
MRS - Materials Research Society |
MRS-Materials Research Society |
MRS - Materials Research Society |
4
Conference Proceedings
Role of Dopants and Impurities on Pinhole Formation; Defects Formed at InGaN/GaN and AlGaN/GaN Quantum Wells
MRS - Materials Research Society |
Materials Research Society |
5
Conference Proceedings
TEM/HREM Analysis of Defects in GaN Epitaxial Layers Grown by MOVPE on SiC and Sapphire
MRS - Materials Research Society |
11
Conference Proceedings
THE INFLUENCE OF CURRENT STRESSING ON THE STRUCTURE OF Ag CONTACTS TO GaAs
Materials Research Society |
6
Conference Proceedings
Effect of N/Ga flux ratio in GaN buffer layer growth by MBE on (0001) sapphire on defect formation in the GaN main layer
MRS-Materials Research Society |
12
Conference Proceedings
Effect of Stoichiometry on Defect Distribution in Cubic GaN Grown on GaAs by Plasma-Assisted MBE
MRS - Materials Research Society |