Dry Etch Damage in InN, InGaN and InAlN
- Author(s):
Pearton, S. J. Lee, J. W. MacKenzie, J. D. Vartuli, C. B. Donovan, S. M. Abernathy, C. R. Shul, R. J. Ren, F. Lothian, J. R. - Publication title:
- III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.
- Title of ser.:
- Materials Research Society symposium proceedings
- Ser. no.:
- 423
- Pub. Year:
- 1996
- Page(from):
- 163
- Pub. info.:
- Pittsburgh, Pa.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558993266 [1558993266]
- Language:
- English
- Call no.:
- M23500/423
- Type:
- Conference Proceedings
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