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Characterization of 4H-SiC MOS Capacitors by a Fast-Ramp Response Technique

Author(s):
Sudarshan, T. S.
Madangarli, V. P.
Gradinaru, G.
Tin, C. C.
Hu, R.
Isaacs-Smith, T.
1 more
Publication title:
III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.
Title of ser.:
Materials Research Society symposium proceedings
Ser. no.:
423
Pub. Year:
1996
Page(from):
99
Pub. info.:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993266 [1558993266]
Language:
English
Call no.:
M23500/423
Type:
Conference Proceedings

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