Stress in Silicon Due to the Formation of Self Aligned Poly-CoSi2 Lines Studied by Micro-Raman Spectroscopy

Stress in Silicon Due to the Formation of Self Aligned Poly-CoSi2 Lines Studied by Micro-Raman Spectroscopy

Author(s):

Publication title:

Silicide thin films - fabrication, properties, and applications : Symposium held November 27-30, 1995, Boston, Massachusetts, USA

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

402

Pub. Year:

1996

Page(from):

251

Pub. info.:

Pittsburgh: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993051 [1558993053]

Language:

English

Call no.:

M23500/402

Type:

Conference Proceedings

Details

TDL ID:	ZA00019834
Series ID:	PA00000011
Conf. info. (Name):	Symposium on silicide thin films
Conf. info. (Number):	1995
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1995.11.27-1995.11.30

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