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Low-temperature photoluminescence characterization of impurity-doped GaAs and silicides prepared by molecular beam epitaxy,high-energy ion implantation,and combined ion-beam and molecular beam epitaxy(CIBMBE)methods

Author(s):
Makita,Y. ( Electrotechnical Lab. )  
Publication title:
Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing III
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
2877
Pub. Year:
1996
Page(from):
87
Page(to):
98
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819422750 [0819422754]
Language:
English
Call no.:
P63600/2877
Type:
Conference Proceedings

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