Blank Cover Image

Dependence of MOSFET hot-carrier aging on PECVD oxide process

Author(s):
Publication title:
Microelectronic Device and Multilevel Interconnection Technology
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
2636
Pub. Year:
1995
Page(from):
299
Page(to):
306
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819420022 [0819420026]
Language:
English
Call no.:
P63600/2636
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Process Dependence of MOSFET Performance and Reliability with N2O-Based Furnace-Grown Gate Oxides

Han, L.K, Wang, H.H., Yoon, G.W., Allman, D., Kwong, D.L.

Electrochemical Society
7 Conference Proceedings Hot-carrier degradation for deep-submicron N-MOSFETs introduced by back-end processing

Lie,D.Y.C., Xia,W., Yota,J., Joshi,A.B., Zwingman,R., Williams,R., Kerametlian,V., Cerney,D., Min,B.W., Kwong,D.L.

SPIE-The International Society for Optical Engineering
2 Conference Proceedings Improved hot-carrier reliability of MOSFET analog performance with NO-nitrided SiO2 gate dielectrics

Han,L.K., Kwong,D.

SPIE-The International Society for Optical Engineering
8 Conference Proceedings High Quality Oxynitride Gate Dielectrics Prepared by Reoxidation of NH3-Nitrided SiO2 and N2O-Oxide in N2O Ambient

Han, L.K., Kim, J., Wang, H.H., Yan, J., Kwong, D.L.

Electrochemical Society
3 Conference Proceedings Effects of various RIE process-induced damages on MOSFET characteristics

Min,B.W., Han,L.K., Joshi,A.B., Mann,R., Chung,L., Kwong,D.-L.

SPIE-The International Society for Optical Engineering
9 Conference Proceedings Highly reliable CVD-stacked oxynitride gate dielectric fabricated by in-situ rapid thermal multiprocessing

Yan,J., Han,L.K., Kwong,D.-L.

SPIE-The International Society for Optical Engineering
4 Conference Proceedings Electrical characteristics of n-and p-MOSFETs with N2O-reoxidized NH3-nitrided N2O oxides as gate dielectrics

Han,L.K., Wang,H., Yan,J., Kim,J.H., Yoon,G.W., Kwong,D.-L.

SPIE-The International Society for Optical Engineering
10 Conference Proceedings Ultrathin Oxide Reliability: Effects of Gate Doping Concentration and Poly- Si/SiO2 Interface Stress Relaxation

Wristers, D., Wang, H.H., Han, L.K., Lin, C., Chen, T.S., Kwong, D.L., Fulford, J.

Electrochemical Society
5 Conference Proceedings Polarity Dependence of Dielectric Breakdown in NO/N2 O-Based Oxynitrides

Kim, B.Y., Han, L.K., Wristers, D., Fulford, J., Kwong, D.-L.

Electrochemical Society
11 Conference Proceedings Formation of High Quality Thin Stacked Oxynitride Gate Dielectrics by In-Situ Rapid Thermal Multiprocessing

Bhat, M., Cho, T.H., Yan, J., Han, L.K., Kwong, D.L.

Electrochemical Society
6 Conference Proceedings Oxide/nitride stacked layers prepared by in situ rapid-thermal multiprocessing

Wang,H.H., Han,L.K., Yan,J., Kwong,D.-L.

SPIE-The International Society for Optical Engineering
12 Conference Proceedings Channel Hot Carrier Stress of Oxynitrided-Gate MOSFETs

Nguyen, K., Lee, S., Kahrizi, M., Landsberger, L., Belkouch, S., Jean, C.

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12