Improved figure-of-merit metric for CMOS transistor performance and its application to 0.25-ｦﾌm CMOS Technologies

Improved figure-of-merit metric for CMOS transistor performance and its application to 0.25-ｦﾌm CMOS Technologies

Author(s):

Chatterjee,A. ( Texas Instruments Inc. )
Rodder,M.
Chen,I.-C.

Publication title:

Microelectronic Device and Multilevel Interconnection Technology

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

2636

Pub. Year:

1995

Page(from):

115

Page(to):

123

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819420022 [0819420026]

Language:

English

Call no.:

P63600/2636

Type:

Conference Proceedings

Details

TDL ID:	ZA00019786
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Microelectronic Manufacturing : Microelectronic Device and Multilevel Interconnection Technology
Conf. info. (Number):	1995
Conf. info. (Venue):	Austin, TX, USA
Conf. info. (Date):	1995.10.25-1995.10.26

Similar Items:

1 Conference Proceedings High-performance 0.25-ｦﾌm CMOS technology for fast SRAMs Hayden,J.D., McNelly,T.F., Perera,A.H., Pfiester,J.R., Subramanian,C.K., Thompson,M.A. SPIE-The International Society for Optical Engineering	7 Conference Proceedings Characterization and optimization of CD control for 0.25-ｦﾌm CMOS applications Ronse,K., Beeck,M.Opde, Yen,A., Kim,K.-H., hove,L.Van den SPIE-The International Society for Optical Engineering
2 Conference Proceedings Merged 2.5-V and 3.3-V 0.25-ｦﾌm CMOS technology Kizilyalli,I.C., Huang,R.Y., Hwang,D., Kane,B.C., Ashton,R., Kuehne,S., Deng,X., Twiford,M.S., Martin,E.P., … SPIE-The International Society for Optical Engineering	8 Conference Proceedings Optical proximity correction considering mask manufacturability and its application to 0.25-ｦﾌm DRAM for enhanced device performance Park,C.-H., Rhie,S.-U., Choi,J.-H., Park,J.-S., Seo,H.-W., Kim,Y.-H., Park,Y.-K., Han,W.-S., Lee,W.-S., Kong,J.-T. SPIE - The International Society for Optical Engineering
3 Conference Proceedings Sheet resistance requirements for the source/drain regions of 0.11-ｦﾌm gate length CMOS technology Mehrotra,M., Chatterjee,A., Chen,I.-C SPIE-The International Society for Optical Engineering	9 Conference Proceedings Prediction of 0.18-ｦﾌm CMOS technology performance using tuned device simulation Nandakumar,M., Rodder,M., Chen,I.-C. SPIE-The International Society for Optical Engineering
4 Conference Proceedings Manufacturability Issues for Application of Silicides in 0.25 ｦﾌm CMOS Process and Beyond Wang, Q. F., Lauwers, A., Jonckx, F., Potter, M. de, Chen, Chun-Cho, Maex, K. MRS - Materials Research Society	10 Conference Proceedings Improved Al-Via Fill Process Technology for Sub-0.25 ｦﾌm Interconnect Sengupta, S. S., Narasimhan, M., Lee, S., Abburi, M., Yao, G. MRS - Materials Research Society
5 Conference Proceedings Integration of Multi-Level Copper Metallization into a High-Performance Sub-0.25 ｦﾌm Technology Venkatraman, R., Jain, A., Farkas, J., Mendonca, J., Hamilton, G., Capasso, C., Denning, D., Simpson, C., Rogers, B., … MRS - Materials Research Society	11 Conference Proceedings Performance,standby power,and manufacturability trade-off in transistor design consideration for 0.25-ｦﾌm technology Bhat,N., Chuang,H., Tsui,P., Woodruff,R., Grant,J., Kruth,R., Perera,A.H., Poon,S., Collins,S., Dyer,O., Misra,V., … SPIE-The International Society for Optical Engineering
6 Conference Proceedings Prediction of CMOS transistor performance at 0.10-ｦﾌm gate length using tuned simulations Sridhar,S., Mehrotra,M., Rodder,M., Nandakumar,M., Chen,I.-C. SPIE-The International Society for Optical Engineering	12 Conference Proceedings Silicide Contacts for Sub-0.25 ｦﾌm Devices Chen, L. J., Cheng, S. L., Chang, S. M., Peng, Y. C., Huang, H. Y., Cheng, L. W. MRS - Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12