Lithium induced vacancy formation and its effect on the diffusivity of lithium in gallium arsenide.(Invited)

Lithium induced vacancy formation and its effect on the diffusivity of lithium in gallium arsenide.(Invited)

Author(s):

Publication title:

Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997

Title of ser.:

Materials science forum

Ser. no.:

258-263

Pub. Year:

1997

Vol.:

Part3

Page(from):

1813

Page(to):

1820

Pub. info.:

Zurich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497898 [0878497897]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00019755
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Defects in Semiconductors : ICDS
Conf. info. (Number):	19th
Conf. info. (Venue):	Aveiro, Portugal
Conf. info. (Date):	1997.07.00

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