The influence of isovalent doping on diffusion of interstitial oxygen in silicon

The influence of isovalent doping on diffusion of interstitial oxygen in silicon

Author(s):

Publication title:

Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997

Title of ser.:

Materials science forum

Ser. no.:

258-263

Pub. Year:

1997

Vol.:

Part3

Page(from):

1773

Page(to):

1776

Pub. info.:

Zurich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497898 [0878497897]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00019755
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Defects in Semiconductors : ICDS
Conf. info. (Number):	19th
Conf. info. (Venue):	Aveiro, Portugal
Conf. info. (Date):	1997.07.00

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