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Erbium-related defects in gallium arsenide.(Invited)

Author(s):
Peaker,A.R.
Coppinger,F.
Efeoglu,H.
Evans-Freeman,J.H.
Maude,D.K.
Portal,J.-C.
Rutter,P.
Sionger,K.E.
Scholes,A.
Wright,A.C.
5 more
Publication title:
Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997
Title of ser.:
Materials science forum
Ser. no.:
258-263
Pub. Year:
1997
Vol.:
Part3
Page(from):
1551
Page(to):
1558
Pub. info.:
Zurich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878497898 [0878497897]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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