Donor doping of ZnSe:lattice location aud annealing behaviour of implanted boron
- Author(s):
Itterrnann,B. Welker,G. Kroll,F. Mai,F. Marbach,K. Ackermann,H. Stockmann,H.-J. Oldckop,E. Zeitz,W.-D. - Publication title:
- Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997
- Title of ser.:
- Materials science forum
- Ser. no.:
- 258-263
- Pub. Year:
- 1997
- Vol.:
- Part3
- Page(from):
- 1389
- Page(to):
- 1395
- Pub. info.:
- Zurich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878497898 [0878497897]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
Trans Tech Publications |
7
Conference Proceedings
RAMAN STUDIES OF ZnSe LATTICE DAMAGE AND RECOVERY DUE TO N IMPLANTATION AND ANNEALING
Materials Research Society |
2
Conference Proceedings
Behaviour of Boron After Implantation into Silicon-Schottky Diodes:A β-NMR Study on the Fermi-Level Dependence
Trans Tech Publications |
MRS - Materials Research Society |
Trans Tech Publications |
Materials Research Society |
Trans Tech Publications |
Trans Tech Publications |
North-Holland |
11
Conference Proceedings
STABILITY OF HEAVILY DOPED Si FORMED BY As+ IMPLANTATION AND RAPID THERMAL ANNEALING
Materials Research Society |
6
Conference Proceedings
DIFFUSION AND ACTIVATION DURING RAPID THERMAL ANNEALING OF IMPLANTED BORON IN SILICON
Materials Research Society |
MRS-Materials Research Society |