TRAPPING CHARACTERISTICS OF THE DUAL STATES OF THE DX CENTER IN MBE GROWN Si DOPED AlGaAs.

TRAPPING CHARACTERISTICS OF THE DUAL STATES OF THE DX CENTER IN MBE GROWN Si DOPED AlGaAs.

Author(s):

Publication title:

Defects in Semiconductors : Proceedings of the 14th International Conference on Defects in Semiconductors, ICDS-14, Paris, France, August 18-22, 1986

Title of ser.:

Materials science forum

Ser. no.:

10-12

Pub. Year:

1986

Vol.:

Part1

Page(from):

405

Page(to):

410

Pub. info.:

Aedermannsdorf, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878495511 [0878495517]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00019743
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Defects in Semiconductors - ICDS
Conf. info. (Number):	14th
Conf. info. (Venue):	Paris, France
Conf. info. (Date):	1986.08.18-1986.08.22

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