THEORETICAL MODEL OF TRANSITION METAL-SHALLOW ACCEPTOR IMPURITY PAIRS IN SILICON.
- Author(s):
- Publication title:
- Defects in Semiconductors : Proceedings of the 14th International Conference on Defects in Semiconductors, ICDS-14, Paris, France, August 18-22, 1986
- Title of ser.:
- Materials science forum
- Ser. no.:
- 10-12
- Pub. Year:
- 1986
- Vol.:
- Part1
- Page(from):
- 55
- Page(to):
- 60
- Pub. info.:
- Aedermannsdorf, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878495511 [0878495517]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Theoretical interpretation of EPR measurements on the iron-shallow acceptor pairs in silicon
Trans Tech Publications |
7
Conference Proceedings
Electronic structure of transition-metal impurities in Ga-As1-xPx-Px alloys
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
9
Conference Proceedings
THEORETICAL INVESTIGATION OF DEEP LEVEL COMPLEXES RELATED TO CARBON AND OXYGEN IMPURITIES IN SILICON.
Trans Tech Publications |
4
Conference Proceedings
Chemical trends in electronic properties of arseoic vacaucy-3d transition metal pairs in GaAs
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
6
Conference Proceedings
Chemical Trends in Electronic Properties of Gold-3-D Transition Metal Impurity Pairs in Silicon
MRS - Materials Research Society |
Trans Tech Publications |