Blank Cover Image

Influence of doping and geometry on GaN ultraviolet photodiode performance: numerical modeling

Author(s):
  • Malachowski,M. J. ( Military Univ.of Technology (Poland) and Pedagogical Univ.(Poland) )
  • Rogalski,A. ( Military Univ.of Technology (Poland) )
Publication title:
Solid state crystals in optoelectronics and semiconductor technology : 7-11 October 1996, Zakopane, Poland
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
3179
Pub. Year:
1997
Page(from):
242
Page(to):
246
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819426055 [0819426059]
Language:
English
Call no.:
P63600/3179
Type:
Conference Proceedings

Similar Items:

Malachowski,M.J.

SPIE-The International Society for Optical Engineering

7 Conference Proceedings Semiconductor ultraviolet detectors

Razeghi,M., Rogalski,A.

SPIE-The International Society for Optical Engineering

Rogalski,A.

SPIE - The International Society for Optical Engineering

Rogalski, A.

SPIE-The International Society for Optical Engineering

Matachowski,M.J., Rogalski,A.

SPIE-The International Society for Optical Engineering

Rogalski,A.

SPIE-The International Society for Optical Engineering

Wenus, J., Rutkowski, J., Rogalski, A.

SPIE-The International Society for Optical Engineering

Rogalski,A., Razeghi,M.

SPIE-The International Society for Optical Engineering

Rogalski,A.

SPIE - The International Society for Optical Engineering

Olesik, J., Malachowski, M.J., Olesik, Z.

SPIE-The International Society for Optical Engineering

6 Conference Proceedings AlGaN ultraviolet detectors

Razeghi,M., Rogalski,A.

SPIE-The International Society for Optical Engineering

Wenus, J., Rutkowski, J., Rogalski,A.

SPIE-The International Society for Optical Engineering

1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12