X-ray investigation of the relaxation and diffusion behavior of strained SiGe/Si structures under hydrostatic pressure at high temperatures

X-ray investigation of the relaxation and diffusion behavior of strained SiGe/Si structures under hydrostatic pressure at high temperatures

Author(s):

Zaumseil,P. ( Institute for Semiconductor Physics (FRG) )
Fischer,G. G. ( Institute for Semiconductor Physics (FRG) )
Misiuk,A. ( Institute of Electron Technology (Poland) )

Publication title:

Solid state crystals in optoelectronics and semiconductor technology : 7-11 October 1996, Zakopane, Poland

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

3179

Pub. Year:

1997

Page(from):

172

Page(to):

175

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819426055 [0819426059]

Language:

English

Call no.:

P63600/3179

Type:

Conference Proceedings

Details

TDL ID:	ZA00019723
Series ID:	PA00000029
Conf. info. (Name):	Solid State Crystals in Optoelectronics and Semiconductor Technology
Conf. info. (Number):	1996
Conf. info. (Venue):	Zakopane, Poland
Conf. info. (Date):	1996.10.07-1996.10.11

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